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G. J. Davies und R. H. Williams (eds). Semiconductor Growth, Surfaces and Interfaces. Published by Chapman & Hall for The Royal Society, 1994. Chapman & Hall. 2–6 Boundary Row, London SE 1 8HN, UK, 158 Seiten, zahlreiche Abbildungen und Tabellen, Quellennachweise gesondert zu jedem Artikel, Schlagwörterverzeichnis. ISBN 0‐412–57730–5, Preis £ 30.00
Author(s) -
Gottschalch V.
Publication year - 1995
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170300218
Subject(s) - semiconductor , engineering physics , physics , condensed matter physics , quantum mechanics