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Thin film n‐CdS/p‐AgInTe 2 heterojunction
Author(s) -
Patel Basumati H.
Publication year - 1995
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170300211
Subject(s) - heterojunction , thin film , materials science , optoelectronics , nanotechnology
The fabrication and characteristics of n‐CdS/p‐AgInTe 2 heterojunction is described. The height of the barrier is measured using current‐voltage characteristics and capacitance‐voltage characteristic. A barrier height of 0.85 volt is obtained. The light and dark current‐voltage characteristics and cell parameters are reported for a thin film n‐CdS/p‐AgInTe 2 heterojunction device.
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