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Enhanced diffusion of phosphorus at grain boundaries in multicrystalline silicon
Author(s) -
Schimpf K.,
Palm J.,
Alexander H.
Publication year - 1994
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170290815
Subject(s) - grain boundary , diffusion , silicon , materials science , phosphorus , grain boundary diffusion coefficient , solar cell , chemical physics , effective diffusion coefficient , crystallography , chemical engineering , metallurgy , optoelectronics , chemistry , thermodynamics , microstructure , physics , medicine , radiology , magnetic resonance imaging , engineering
Two different methods were applied to examine the diffusion of phosphorus at grain boundaries in silicon. Five solar‐cells processed on multicrystalline silicon were investigated. These cells are distinguished by different materials, diffusion‐temperature, and further preparation. Enhanced diffusion at grain boundaries was observed in two of these cells with both methods. One solar cell also showed enhanced diffusion at dislocations. A correlation of the phosphorus diffusion and an enhanced recombination activity of the grain boundaries of these cells is found.