Gas etching of GaAs monocrystalline substrates in the presence of Ga‐ and In sources | Zendy

Popov A. S. | Zendy; Hitova L. | Zendy; Atanasova R. K. | Zendy; Nikolova S. L. | Zendy

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Gas etching of GaAs monocrystalline substrates in the presence of Ga‐ and In sources

Author(s) -

Popov A. S.,

Hitova L.,

Atanasova R. K.,

Nikolova S. L.

Publication year - 1994

Publication title -

crystal research and technology

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.377

H-Index - 64

eISSN - 1521-4079

pISSN - 0232-1300

DOI - 10.1002/crat.2170290718

Subject(s) - monocrystalline silicon , etching (microfabrication) , substrate (aquarium) , materials science , volumetric flow rate , optoelectronics , analytical chemistry (journal) , silicon , nanotechnology , chemistry , geology , physics , environmental chemistry , thermodynamics , layer (electronics) , oceanography

A special case of gas etching of GaAs substrates in the process of VPE in the presence of (Ga + In) source was investigated. The dependence of the etching rate on the source and the substrate temperature, and the AsCl 3 content in the gas flow was studied.

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