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Gas etching of GaAs monocrystalline substrates in the presence of Ga‐ and In sources
Author(s) -
Popov A. S.,
Hitova L.,
Atanasova R. K.,
Nikolova S. L.
Publication year - 1994
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170290718
Subject(s) - monocrystalline silicon , etching (microfabrication) , substrate (aquarium) , materials science , volumetric flow rate , optoelectronics , analytical chemistry (journal) , silicon , nanotechnology , chemistry , geology , physics , environmental chemistry , thermodynamics , layer (electronics) , oceanography
A special case of gas etching of GaAs substrates in the process of VPE in the presence of (Ga + In) source was investigated. The dependence of the etching rate on the source and the substrate temperature, and the AsCl 3 content in the gas flow was studied.