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Thermoelectric power of indium sesquisulphide single crystals
Author(s) -
Nassary M. M.
Publication year - 1994
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170290715
Subject(s) - seebeck coefficient , electron , indium , diffusion , analytical chemistry (journal) , atmospheric temperature range , materials science , effective mass (spring–mass system) , thermoelectric effect , electrical resistivity and conductivity , conductivity , chemistry , atomic physics , condensed matter physics , thermodynamics , physics , nuclear physics , optoelectronics , chromatography , quantum mechanics
Abstract The investigation covers a temperature range from 200 to 450 K. Thermoelectric power measurements of In 2 S 3 crystals showed that all samples under investigation have a positive TEP in all temperature ranges, indicating n‐type conductivity for In 2 S 3 crystals. The ratio of the electron and hole mobilities is μ n /μ p = 4.71. The effective mass of electrons m n *is found to be 0.00008 × 10 −31 kg. The obtained effective masses of holes m p *= 1.893 × 10 −31 kg. The diffusion coefficient for both carriers (electrons and holes) is evaluated to be 84.71 cm 2 /s and 17.985 cm 2 /s respectively. The mean free time between collision is estimated to be τ n = 1.7 × 10 −20 s, and τ p = 8.5 × 10 −17 s. The estimated diffusion length for electrons is found to be L n = 1.2 × 10 −9 cm and L p = 3.9 × 10 −8 cm.