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Defect studies in CuB III C 2 VI chalcopyrite compounds using the ion channeling technique
Author(s) -
Neumann H.
Publication year - 1994
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170290713
Subject(s) - chalcopyrite , yield (engineering) , ion , fluence , chemistry , crystallography , materials science , analytical chemistry (journal) , copper , metallurgy , organic chemistry , chromatography
Based on simple approximations the backscattering minimum yield is estimated for axial ion channeling in perfect crystals of six CuB III C 2 VIchalcopyrite compounds. The results obtained for CuInSe 2 are compared with experimental channeling spectra. Point defect concentrations up to about 10 21 cm −3 are estimated for CuInSe 2 single crystals grown by the vertical Bridgman method. A simple power law is found for the fluence dependence of the damage density in oxygen implanted CuInSe 2 single crystals.
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