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On the kinetics of GaAs chemical transport and epitaxy in the system GaAs–I 2
Author(s) -
Hitova L.,
Lenchev A.,
Trifonova E. P.,
Apostolova M.
Publication year - 1994
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170290708
Subject(s) - epitaxy , kinetics , materials science , kinetic energy , closed system (control theory) , chemistry , crystallography , chemical physics , thermodynamics , nanotechnology , physics , layer (electronics) , quantum mechanics
Abstract Kinetic analysis of experimental data on transport and epitaxial growth of GaAs with iodine in closed and in open tube systems has been carried out. The uniformly shrinking core model has been applied to study GaAs transport kinetics in the closed system. The kinetics of GaAs epitaxy in the open one is interpreted according to a model which assumes that in the initial stage of chemical reactions new phase nuclei are formed instantly at a constant number of active centers and that the nuclei grow isotropically.