Premium
Liquid phase epitaxial growth and characterization of thin In 1− x Ga x As y P 1– y layers lattice‐matched to InP
Author(s) -
Becher S.,
Gottschalch V.,
Wagner G.,
Schwabe R.,
Staehli J.
Publication year - 1994
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170290706
Subject(s) - epitaxy , heterojunction , full width at half maximum , characterization (materials science) , materials science , lattice (music) , crystal growth , photoluminescence , liquid phase , analytical chemistry (journal) , optoelectronics , crystallography , chemistry , nanotechnology , physics , layer (electronics) , chromatography , acoustics , thermodynamics
Growth studies enabled the deposition of In 0.71 Ga 0.29 As 0.68 P 0.32 single quantum well structures with InP or In 0.88 Ga 0.12 As 0.26 P 0.74 confinement layers lattice‐matched to (001) InP by liquid phase epitaxy (LPE). Well widths in the order of 50–100 Å have been achieved using a conventional step cooling technique. The physical characterization has demonstrated the capability of the employed method to produce multilayered heterostructures which display confined particle states; quantum mechanically induced blue‐shifts of the low temperature PL‐emission up to 125 meV were measured. A remarkable reduction of the FWHM values of the shifted PL peaks was attained by optimization of the growth conditions.