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The growth of high‐quality MCT films by MBE using in‐situ ellipsometry
Author(s) -
Svitashev K. K.,
Dvoretsky S. A.,
Sidorov Yu. G.,
Shvets V. A.,
Mardezhov A. S.,
Nis I. E.,
Varavin V. S.,
Liberman V.,
Remesnik V. G.
Publication year - 1994
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170290703
Subject(s) - in situ , ellipsometry , materials science , quality (philosophy) , analytical chemistry (journal) , optoelectronics , chemistry , thin film , nanotechnology , physics , chromatography , organic chemistry , quantum mechanics
The ellipsometry and RHEED study of high‐quality MCT films grown on (112)‐ and (130) CdTe and GaAs by MBE was carried out. The dependence of the ellipsometric parameter ψ on MCT composition is evaluated. It was shown that such parameters as growth rate, the surface roughness, initial substrate temperature, and film composition may be measured by the in ‐ situ ellipsometry. The appearance of surface roughness was observed in the initial stage of MCT growth under various compositions ( x CdTe = 0 ÷ 0.4). The further growth at optimum conditions leads to the smoothing of the surface and supplies us with high‐quality MCT films. The concentration, mobility, and life time of carriers in MCT films were respectively: n = 1.8 × 10 14 ÷ 8.2 × 10 15 cm −3 , μ n = 44000 ÷ 370000 cm 2 V −1 s −1 , τ n = 40 ÷ 220 ns; p = 1.8 × 10 15 ÷ 8.4 × 10 15 cm −3 , μ p = 215 ÷ 284 cm 2 V −1 s −1 , τ p = 12 ÷ 20 ns.