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Influence of proton implantation on the properties of CuInSe 2 single crystals (II)
Author(s) -
Yakushev M. V.,
Neumann H.,
Tomlinson R. D.,
Rimmer P.,
Lippold G.
Publication year - 1994
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170290328
Subject(s) - fluence , copper , proton , passivation , materials science , hydrogen , range (aeronautics) , thermal stability , ion implantation , conductivity , atmospheric temperature range , electrical resistivity and conductivity , crystallography , analytical chemistry (journal) , chemistry , ion , metallurgy , nanotechnology , layer (electronics) , nuclear physics , physics , organic chemistry , engineering , chromatography , meteorology , electrical engineering , composite material
Copper deficient p‐type conducting CuInSe 2 single crystals were implanted with 40 keV protons in the fluence range from 2.5 · 10 14 to 1.5 · 10 16 cm −2 . Over the whole fluence range the implanted layers were n‐type conducting which is ascribed to passivation of the acceptors due to copper vacancies and formation of donors by hydrogen atoms located at interstitial positions. The thermal stability of the conductivity changes due to proton implantation is limited to temperatures below 100 °C.