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Floating‐zone growth of GaAs under microgravity during the D2‐mission
Author(s) -
Cröll A.,
Tegetmeier A.,
Nagel G.,
Benz K. W.
Publication year - 1994
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170290308
Subject(s) - dopant , crystal (programming language) , materials science , marangoni effect , crystal growth , convection , doping , crystallography , chemistry , physics , meteorology , optoelectronics , computer science , programming language
A Te‐doped GaAs (100) single crystal of 20 mm diameter and 20 mm length was successfully grown by the floating‐zone method during the 2nd German Spacelab mission D2. Dopant striations due to Marangoni convection as well as a reduction of the etch pit density compared to te starting material have been found. The last part of the crystal, grown with the quite high translation rate of 120 mm/h, showed no sign of unstable growth and exhibited properties similar to the parts grown with 3 and 6 mm/h.