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Thermoelectric properties of indium sesquiselenide single crystals
Author(s) -
Nassary M. M.,
Nagat A. T.,
Hussein S. A.
Publication year - 1994
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170290220
Subject(s) - electron , indium , diffusion , atmospheric temperature range , charge carrier , analytical chemistry (journal) , thermoelectric effect , materials science , condensed matter physics , atomic physics , chemistry , physics , thermodynamics , nuclear physics , chromatography , metallurgy
Single crystals of δ‐In 2 Se 3 were prepared in the solid state laboratory at Qena‐Egypt, by means of Bridgman technique. The temperature dependence of the thermal e.m.f. α in the temperature range from 205 K up to 360 K of In 2 Se 3 was studied. The δ‐phase In 2 Se 3 sample appeared to be n‐type. The ratio of the electron and hole mobilities are found to be μ n /μ p = 1.378. The effective masses of charge carriers are m p *= 1.3 × 10 −30 , m n *= 8.27 × 10 −31 kg for holes and electrons, respectively. The diffusion coefficient was estimated to be D n = 3.37 cm 2 /s and D p = 2.45 cm 2 /s for both electrons and holes, respectively. The mean free time between collision can be deduced to be τ n = 70 × 10 −16 s and τ p = 8 × 10 −14 s for both electrons and holes. The diffusion length of the electrons and holes are found to be L n = 1.5 × 10 −7 cm and L p = 4.4 × 10 −7 cm.