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X‐ray determination of thermal lattice expansion of CuSi 2 + x P 3 ( x = 1, 2) at elevated temperatures
Author(s) -
Bhikshamaiah G.,
Omar M. S.,
Suryanarayana S. V.
Publication year - 1994
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170290219
Subject(s) - thermal expansion , silicon , ternary operation , semiconductor , lattice constant , chemistry , lattice (music) , analytical chemistry (journal) , diffraction , copper , materials science , crystallography , metallurgy , optics , optoelectronics , chromatography , computer science , acoustics , physics , programming language
CuSi 2 P 3 is a semiconductor having sphalerite structure with the space group F 3 3m with random distribution of the copper and silicon atoms on the cation sites. Silicon is soluble in CuSi 2 P 3 upto 3 moles to form CuSi 2 + x P 3 ( x = 1, 2, 3) compounds in single phase. In continuation of our work on thermal expansion of ternary semiconductors, CuSi 3 P 3 crystals have been grown by a modified Bridgman method. Using a Unicam high temperature camera, the precision lattice parameter and the coefficient of thermal expansion (CTE) of CuSi 3 P 3 at various high temperatures have been evaluated from X‐ray diffraction data. It has been found that the lattice parameter increases non‐linearly while the coefficient of thermal expansion increases linearly with temperature. The results on thermal expansion of various semiconductors have been discussed in terms of their ionicities.