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X‐ray interferometric investigations of structural distortions in silicon crystals as a result of diffusion
Author(s) -
Aboyan A. O.,
Sarafyan M. A.
Publication year - 1994
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170290215
Subject(s) - silicon , boron , moiré pattern , diffusion , materials science , x ray , stress (linguistics) , interferometry , character (mathematics) , crystallography , optics , analytical chemistry (journal) , chemistry , metallurgy , geometry , physics , thermodynamics , linguistics , philosophy , organic chemistry , mathematics , chromatography
Abstract The influence of boron diffusion on the X‐ray Moiré pattern is investigated by means of X‐ray interferometry. It is shown that at low boron concentrations in silicon, the Moiré patterns indicate the non‐dislocative character of arising stresses. At higher concentrations the dislocations arise. Basing on the obtained topogram, the maximum local stress is evaluated, which at boron concentration of 2.5 · 10 19 at/cm 3 is 1.05 · 10 8 N/m 2 .