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Thermal cycling, DLTS, and PEC studies on LEC gallium arsenide
Author(s) -
Santhanaraghavan P.,
Sankaranarayanan K.,
Arokiaraj J.,
Anbukumar S.,
Kumar J.,
Ramasamy P.
Publication year - 1994
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170290211
Subject(s) - gallium arsenide , gallium , wafer , materials science , temperature cycling , optoelectronics , etching (microfabrication) , arsenide , fabrication , thermal , nanotechnology , metallurgy , physics , thermodynamics , medicine , alternative medicine , layer (electronics) , pathology
This paper discusses the growth of gallium arsenide single crystals using the LEC technique. The Semi‐insulating gallium arsenide was studied. The defect investigations were made by DLTS and etching studies. The variation of deep level concentration along the wafer was estimated using DLTS. The fabrication and efficiency of the PEC Solar cells are also reported.