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On chemically vapour‐deposited Si/Ge growth in a multi‐wafer deposition process at atmospheric pressure
Author(s) -
Kühne H.,
Morgenstern Th.,
Fischer A.,
Kissinger G.,
Krüger D.
Publication year - 1994
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170290207
Subject(s) - germane , wafer , layer (electronics) , dichlorosilane , chemical vapor deposition , susceptor , deposition (geology) , microelectronics , silicon , hydrogen , silane , materials science , thin film , chemical engineering , hydrogen chloride , atmospheric pressure , chemistry , germanium , epitaxy , nanotechnology , optoelectronics , inorganic chemistry , composite material , organic chemistry , paleontology , sediment , engineering , biology , oceanography , geology
In multi‐wafer deposition of Si/Ge thin films from silane, germane mixtures at low‐temperature epitaxy conditions not only the depletion of the silicon source but also of the germanium source along the reactor tube axis has to be counteracted in order to get homogeneous layer thickness as well as composition. Carrier gas throughput must be minimized to have a sufficient effective chemical reaction rate at low temperature. Thus it cannot be used to flatten layer growth along the susceptor. Yet the addition of a chemically reactive gas, as for instance hydrogen chloride, is suitable to ensure a nearly constant content of the layer forming source gases along the reactor tube. On the other hand hydrogen chloride may infiltrate additional contaminants leading for instance to high oxygen concentration in the deposited layer. However, oxygen soluted or precipitated changes particular features of Si/Ge behaviour for instance during the thin film growth, the following technological stress of the wafer, or the running electronic structures of microelectronic devices.