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Influence of proton implantation on the properties of CuInSe 2 single crystals (I). Ion channeling study of lattice damage
Author(s) -
Yakushev M. V.,
Tomlinson R. D.,
Neumann H.
Publication year - 1994
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170290127
Subject(s) - fluence , radiation damage , annealing (glass) , proton , materials science , ion , ion implantation , irradiation , crystallographic defect , selenium , radiation , lattice (music) , crystallography , radiochemistry , analytical chemistry (journal) , chemistry , optics , nuclear physics , metallurgy , physics , organic chemistry , chromatography , acoustics
The lattice damage of p‐type CuInSe 2 single crystals implanted with 10 keV protons in the fluence range from 2.5 · 10 14 to 8 · 10 15 cm −2 was investigated using the Rutherford backscattering/channeling technique. At proton fluences up to about 2 · 10 15 cm −2 radiation annealing of the defects is observed which is ascribed to very high defect concentrations in the unimplanted samples. At higher fluences radiation damage occurs but the concentration of radiation induced defects ramains low. There are indications that selenium interstitials or defect complexes with selenium interstitials involved are stable defects at room temperature.