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Stoichiometric dependence of electrical characteristics in WSSe single crystals grown by direct and chemical vapour transport techniques
Author(s) -
Joshi Sanjay,
Lakshminarayana D.,
Garg P. K.,
Agarwal M. K.
Publication year - 1994
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170290124
Subject(s) - electrical resistivity and conductivity , stoichiometry , activation energy , materials science , hall effect , characterization (materials science) , analytical chemistry (journal) , thermal conduction , conductivity , chemistry , nanotechnology , chromatography , composite material , electrical engineering , engineering
Single crystals of tungsten sulphoselenide (WSSe) have been grown by both direct and chemical vapour transport techniques. The crystals have been subjected to Hall effect and resistivity measurements for their electrical characterization. The observed differences in the electrical resistivity, type of conduction, and activation energy have been attributed to the stoichiometric differences between the crystals grown by the two techniques. The crystals grown by chemical vapour transport technique with iodine as the transport agent have been found to be more stoichiometric.