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DCXS and RHEED characterization of effectiveness of annealing implanted Si crystals by using pulsed UV excimer laser and sample scanning technique
Author(s) -
Auleytner J.,
Kozankiewicz B.,
Regiński K.
Publication year - 1994
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170290122
Subject(s) - excimer laser , materials science , reflection high energy electron diffraction , annealing (glass) , silicon , ion , analytical chemistry (journal) , scanning electron microscope , single crystal , excimer , laser , diffraction , electron diffraction , optics , optoelectronics , chemistry , crystallography , physics , organic chemistry , chromatography , composite material
In the experiment (111) oriented silicon plates were implanted with 80 keV Ge ions (dose 5 × 10 15 cm −2 ) and with 150 keV Kr ions (dose 5 × 10 15 cm −2 ). Then the samples were annealed with the pulsed excimer laser by using the sample scanning technique. The effectiveness of the annealing has been analyzed by means of double crystal X‐ray spectrometry (DCXS) and reflection high energy electron diffraction (RHEED). The results of the experiment show that the applied technique of annealing considerably improves the perfection of the structure of the implanted silicon crystals.