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Investigation of the thermal conditions during silicon carbide crystal growth
Author(s) -
Lilov S. K.
Publication year - 1994
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170290118
Subject(s) - sublimation (psychology) , silicon carbide , crucible (geodemography) , materials science , crystal (programming language) , crystal growth , silicon , thermal , carbide , monocrystalline silicon , crystallography , micro pulling down , mineralogy , thermodynamics , chemistry , composite material , metallurgy , physics , computational chemistry , psychology , computer science , psychotherapist , programming language
In the present work an analysis of the thermal conditions during silicon carbide crystal growth from the vapour phase by the sublimation method is carried out. On the basis of the obtained results from the calculation of the temperature distribution along the length of the growing crystal it was drawn a conclusion that in order to decrease the density of dislocations in the growing crystals it is necessary to decrease the temperature gradients in the crucible for growing.