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Silicon Epitaxial layers with non‐uniform doping profiles (II). The non‐uniform doping profile realization
Author(s) -
Halaj J.
Publication year - 1994
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170290110
Subject(s) - doping , realization (probability) , epitaxy , materials science , exponential function , silicon , trapping , optoelectronics , nanotechnology , mathematics , layer (electronics) , mathematical analysis , statistics , ecology , biology
In Part I of the paper the epitaxial doping profile simulation program was described based on the Wong‐Reif trapping model for the SiCl 4 H 2 PH 3 system. This model is used in Part II to design the non‐uniform profile epilayer processing procedure accounting also for the parasitic effect of autodoping. Several epilayers with exponential doping profiles are realized. The resulting profiles exhibit very close agreement with the target profiles.