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Study of film crystallization kinetics initial stage by Monte Carlo simulation
Author(s) -
Aleksandrov L. N.,
Bochkova R. V.,
Kiselev G. B.,
Entin I. A.
Publication year - 1994
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170290108
Subject(s) - nucleation , monte carlo method , crystallization , materials science , reflection (computer programming) , kinetics , oscillation (cell signaling) , intensity (physics) , layer (electronics) , thermodynamics , optics , chemistry , physics , composite material , mathematics , computer science , statistics , biochemistry , quantum mechanics , programming language
The Monte Carlo Simulation has been used for studying the initial stage characteristics of film crystallization during the layer‐by‐layer film growth by two‐dimensional nucleation. It is shown that the non‐monotonous changes of the growing film perimeter and mass correspond to the reflection intensity oscillation from the growth surface. The observed changes of the overgrowing part of the surface are in agreement with the probability‐statistical calculations. The vizualization of surface relief changes during the growth process under different conditions has been provided.