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Electrooptic Properties of SnSe Thin Films Synthesized by Solid State Reaction
Author(s) -
Siddiqui S. S.,
Desai C. F.
Publication year - 1993
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170280823
Subject(s) - thin film , absorbance , band gap , electrical resistivity and conductivity , semiconductor , materials science , tin , diffraction , solid state , deposition (geology) , activation energy , analytical chemistry (journal) , vacuum deposition , optoelectronics , optics , chemistry , nanotechnology , organic chemistry , metallurgy , paleontology , physics , electrical engineering , engineering , sediment , biology
Tin monoselinide thin films were obtained by solid state reaction in vacuum. They were characterised by X‐ray diffraction and subjected to resistivity and optical absorbance measurements. The data were analysed for obtaining activation energy and band gap. The effects of varying deposition parameters were studied. These films are concluded to be superior to those obtained directly from the compound semiconductor.