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Silicon Epitaxial Layers with Non‐Uniform Doping Profiles (I). The Model Parameters' Adjustment
Author(s) -
Halaj J.
Publication year - 1993
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170280808
Subject(s) - doping , dopant , epitaxy , silicon , materials science , trapping , optoelectronics , semiconductor , nanotechnology , layer (electronics) , ecology , biology
The non‐uniform doping profiles may prove useful for some semiconductor devices instead of the uniform ones. In the paper the doping mechanism of silicon epitaxial layers in the SiCl 4 H 2 PH 3 system is investigated. The epitaxial doping profile simulation program is developed based on the Wong‐Reif trapping model and taking into account also the difference between dopant profile and the charge carrier profile. The three unknown parameters of the Wong‐Reif model are found with the aid of the simulation program.