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The Real Structure of Ge Ions‐implanted Si Crystals Subjected to Thermal Annealing
Author(s) -
Auleytner J.,
Adamczewska J.,
Reginński K.
Publication year - 1993
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170280715
Subject(s) - annealing (glass) , materials science , ion , silicon , ion implantation , diffraction , analytical chemistry (journal) , crystallography , optics , chemistry , optoelectronics , metallurgy , physics , organic chemistry , chromatography
In the experiment an (111) oriented silicon plate was subjected to implantation by 80 keV Ge ions. Then, the thermal annealing of this sample was carried out in a vacuum of 5 · 10 −8 Tr. The effectiveness of the annealing has been analyzed by means of X‐ray topography, double crystal X‐ray spectrometry and reflection high energy electron diffraction. The rocking curves in reflection and transmission as well as changes in anomalous absorption coefficient were measured. The results have been compared with effects of pulsed‐laser annealing investigated by A ULEYTNER et al. an thermal annealing (P RUSSIN ).