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Hard Heteroepitaxy on 2° Off‐oriented GaAs (100) Substrates (I). The Occurrence of (100) and (111) Surface Orientations in MBE‐grown PbTe Films
Author(s) -
Sadowski J.,
Dynowska E.,
Regiński K.,
Herman M. A.
Publication year - 1993
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170280705
Subject(s) - reflection high energy electron diffraction , electron diffraction , materials science , diffraction , crystallography , molecular beam epitaxy , substrate (aquarium) , reflection (computer programming) , cadmium telluride photovoltaics , condensed matter physics , crystal growth , epitaxy , optoelectronics , optics , chemistry , nanotechnology , physics , oceanography , layer (electronics) , geology , computer science , programming language
The MBE growth of PbTe layers on GaAs (100) 2° off‐oriented substrates belongs to hard heteroepitaxy, because the two materials differ strongly in their lattice constants and, in addition, they also exhibit different crystal structures. Consequently, phases with different surface orientations may occur in MBE‐grown PbTe epilayers. Two crystallographic orientations, i.e. (100) and (111), have been found in the PbTe epilayers grown by MBE on these off‐oriented substrates. X‐ray diffraction and reflection high energy electron diffraction (RHEED) measurements applied as post growth characterization techniques allow to identify which orientation is prevailing in films grown at different MBE conditions. It has been shown that the occurrence of the (100) and (111) orientations in MBE‐grown PbTe epilayers depends mainly on the GaAs substrate in situ preheating procedure. At higher preheating temperature and longer preheating time the (111) orientation prevails. This finding is in accordance with the theoretical model of hard heteroepitaxy of CdTe on GaAs (100) substrates by Griesche et al.