Premium
Atomic Processes during Crystal Growth Studied by Reflection High‐Energy Electron Diffraction
Author(s) -
Däweritz L.
Publication year - 1993
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170280608
Subject(s) - reflection high energy electron diffraction , vicinal , electron diffraction , misorientation , molecular beam epitaxy , reflection (computer programming) , gas electron diffraction , crystallography , kikuchi line , diffraction , atomic units , crystal growth , crystal (programming language) , electron , chemistry , materials science , condensed matter physics , epitaxy , optics , nanotechnology , physics , grain boundary , microstructure , programming language , organic chemistry , layer (electronics) , quantum mechanics , computer science
After a short retrospect on the development of the electron diffraction techniques it is shown that the atomic‐scale morphology of the crystal surface and growth processes on it can be studied in detail during molecular beam epitaxy (MBE) by reflection high‐energy electron diffraction (RHEED). This is demonstrated for the evolution of the terrace‐step‐structure of the singular GaAs (001) surface during growth and after growth interruption and for the attachment of Si atoms at misorientation steps on vicinal GaAs (001) surfaces.