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X‐Ray Diffraction Studies on Point Defects in II–VI Compounds
Author(s) -
Berger H.
Publication year - 1993
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170280604
Subject(s) - cadmium telluride photovoltaics , crystallographic defect , diffraction , electrical resistivity and conductivity , conductivity , lattice (music) , hall effect , chemistry , analytical chemistry (journal) , x ray crystallography , materials science , condensed matter physics , crystallography , optics , nanotechnology , physics , chromatography , quantum mechanics , acoustics
The point defect concentration in Te‐rich CdTe and Hg 1‐ x Cd x Te annealed at various temperatures has been estimated from precision lattice parameters using a simple continuum inclusion model and compared with densities of electrically charged defects determined by high‐temperature Hall and conductivity measurements. The nonstoichiometry is realized by cation vacancies. Dependent on the CdTe content, the ratio of total to charged defect concentrations varies between about unity for HgTe‐rich composition and 75 for CdTe. Therefore, it is necessary to distinct between “electrical” and “chemical” stability regions.