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Double‐Heterostructure Indium‐Tin Oxide/InGaAsP/AlGaAs Lasers
Author(s) -
Takahashi N. S.,
Hunyu Y.,
Shibano E.,
Mochizuki N.,
Kurita S.
Publication year - 1993
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170280523
Subject(s) - optoelectronics , materials science , lasing threshold , heterojunction , cladding (metalworking) , double heterostructure , laser , indium tin oxide , diode , indium , oxide , semiconductor laser theory , current density , layer (electronics) , optics , nanotechnology , wavelength , physics , metallurgy , quantum mechanics
The fabrication and characterization of double‐heterostructure (DH) laser that utilizes an indium‐tin oxide (Ito) transparent cladding and top contact layer. The first room‐temperature lasing operation has been obtained form ITO/InGaAsP/AlGaAs DH laser diode at threshold current density of 12.1 kA/cm 2 . The interfacial recombination velocity of ITO/InGaAsP Interface was estimated to be 4.9 × 10 4 cm/s from a simple model to account for high threshold current, and optical measurements of spontaneous emission and lasing spectra from top stripe window and facet were done.