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Growth Characteristics of GaAlAs Layers Obtained by Long Term Finite Melt Liquid Phase Epitaxy
Author(s) -
Minkov D.,
Nedev N. K.
Publication year - 1993
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170280503
Subject(s) - epitaxy , homogeneous , diffusion , materials science , crystallization , liquid phase , layer (electronics) , phase (matter) , convection , computation , thermodynamics , finite thickness , mechanics , chemistry , composite material , mathematics , physics , organic chemistry , algorithm
The growth of GaAlAs layers by a long term finite melt liquid phase epitaxy is studied expermentally. The influence of the technological parameters of the process upon the growth characteristics of the layer is investigated for a wide range of the technological parameters. In some cases computations of the layer characteristics are made, based on a model of the process. The data for the layer growth characteristics are in agreement with the theory predictions. The comparison of the computed and the experimental results allows the Al and As diffusion coefficients in the melt to be determined, as well as to find when the effect of the homogeneous crystallisation and the convection in the melt can be neglected.