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Thermodynamic analysis of the Gas Phase at the Dissociative Evaporation of Silicon Carbide
Author(s) -
Lilov S. K.
Publication year - 1993
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170280416
Subject(s) - silicon carbide , dissociation (chemistry) , evaporation , carbide , stoichiometry , silicon , materials science , thermodynamics , gas phase , epitaxy , phase (matter) , thermodynamic equilibrium , chemistry , metallurgy , nanotechnology , organic chemistry , physics , layer (electronics)
The thermodynamic analysis of the gas phase at the dissociative evaporation of SiC in the temperature interval (1500–3150) K is carried out. On the basis of the obtained results of the thermodynamic analysis the composition of the equilibrium gas phase above silicon carbide and the “extents of development” of reactions of silicon carbide dissociation and evaporation are determined. The thermodynamic analysis shows that the composition and the stoichiometry of the gas phase above silicon carbide strongly depend on the temperature, and this dependence it is necessary to be taken into account in the analysis of the growth processes of silicon carbide monocrystals and epitaxial layers.