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Electronic Transport Properties of Thallium Sesquiselenide Single Crystals
Author(s) -
Gamal G. A.
Publication year - 1993
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170280322
Subject(s) - thallium , hall effect , atmospheric temperature range , electrical resistivity and conductivity , charge carrier , range (aeronautics) , scattering , single crystal , materials science , electron mobility , ionization , condensed matter physics , analytical chemistry (journal) , ionization energy , crystal (programming language) , chemistry , ion , optoelectronics , crystallography , inorganic chemistry , optics , thermodynamics , physics , programming language , organic chemistry , chromatography , quantum mechanics , computer science , composite material
Electronic transport measurements were made on single crystal samples of Tl 2 Se 3 . The crystals were prepared by a special design based on Bridgman technique. The influence of temperature on the electrical conductivity, Hall effect, Hall mobility and the carrier concentration was investigated in the temperature range 200–400 K. The energy gap as well as the ionization energy were calculated. The scattering mechanism of the charge carrier was discussed in the same temperature range.