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Etch Pit Density Distributions in Undoped and Doped GaAs Single Crystals
Author(s) -
Moravec F.,
Štěpánek B.,
Šestáková V.
Publication year - 1993
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170280321
Subject(s) - etch pit density , dopant , doping , materials science , single crystal , crystal (programming language) , semiconductor materials , mineralogy , condensed matter physics , etching (microfabrication) , crystallography , optoelectronics , chemistry , nanotechnology , semiconductor , physics , layer (electronics) , computer science , programming language
The undoped and doped (Si, N, In) GaAs single crystals are grown by horizontal Bridgman technique. The etch pit density (EPD) profiles were measured in transverse direction for each crystal. It was found that the shape of EPD profiles differs in dependence on the used dopant.