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Surface Coarsening on High‐ T c Superconducting Single Crystals
Author(s) -
Wang Y. S.,
Van Der Eerden J. P.,
Bennema P.,
Schreurs L. W. M.,
Wnuk J.,
Van Der Linden P.
Publication year - 1993
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170280313
Subject(s) - scanning tunneling microscope , differential interference contrast microscopy , microscopy , superconductivity , materials science , optical microscope , impurity , adsorption , condensed matter physics , surface (topology) , crystallography , optics , nanotechnology , chemistry , scanning electron microscope , physics , composite material , geometry , mathematics , organic chemistry
Surface coarsening on high T c superconducting single crystals is proposed to be due to the effect of impurity adsorption on the collective motion of growth steps. Differential interference contrast microscopy (DICM), scanning tunneling microscopy (STM), and polarized optical microscopy (POM) were used for the surface phenomena observations.

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