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The Epitaxial Orientation of Al on Si
Author(s) -
Tempel A.,
Büschel M.,
Gantz T.
Publication year - 1993
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170280309
Subject(s) - epitaxy , elastic energy , substrate (aquarium) , materials science , layer (electronics) , condensed matter physics , relation (database) , silicon , crystallography , orientation (vector space) , chemistry , optoelectronics , nanotechnology , geometry , thermodynamics , physics , mathematics , geology , computer science , oceanography , database
It is shown that the epitaxial growth of Al on Si {111} favours the epitaxial relation{111} Si ‖ {100} Al; 〈110〉 Si ‖ 〈110〉 Alinstead of the more expected relation{111} Si ‖ {111} Al; 〈110〉 Si ‖ 〈110〉 Al.The elastic energy density of the epitaxial layer in the first case mounts to about 40% of that belonging to the second relation. The calculation of the elastic energy density in both cases is based on the assumption of pseudomorphical epitaxial film overgrowth between deposit and substrate supercells.