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Preferred Crystallization of Epitaxially Grown Silicon on Boron‐doped Silicon Substrates
Author(s) -
Stergioudis Georgios
Publication year - 1993
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170280305
Subject(s) - silicon , materials science , epitaxy , recrystallization (geology) , crystallization , polycrystalline silicon , boron , crystallite , substrate (aquarium) , doping , crystallography , optoelectronics , mineralogy , chemical engineering , nanotechnology , metallurgy , chemistry , geology , paleontology , oceanography , organic chemistry , layer (electronics) , engineering , thin film transistor
The recrystallization of silicon layers on a silicon substrate using X‐ray analysis and X‐ray topography was examined. A preferred crystallization was observed. The crystallites resulting from this process seem to grow along the dislocations consuming part of the elastic energy of the dislocations.
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