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Peculiarities of Silicon Carbide Crystal Growth in Quasiclosed Volume
Author(s) -
Lilov S. K.
Publication year - 1993
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170280303
Subject(s) - epitaxy , silicon carbide , crystallization , silicon , materials science , volume (thermodynamics) , crystal growth , gas phase , liquid phase , layer (electronics) , chemical engineering , chemistry , nanotechnology , crystallography , composite material , thermodynamics , optoelectronics , organic chemistry , physics , engineering
On the basis of the accomplished investigation is has been shown that in the known schemes for growing of SiC epitaxial layers from the gas phase in quasiclosed volume it takes place an excretion of the redundant silicon upon the front of crystallization, its accumulation in the gas phase up to the state of the saturation and its deposition upon the growing surface as drops. In this case the growth of the epitaxial layer takes place by the vapour‐liquid‐solid (VLS) mechanisms.