Defect Structure in Te‐doped GaAs Single Crystals after Plastic Deformation (II). Dislocation Slip and Cell Formation | Zendy

Paufler Peter | Zendy; Wagner Gerald | Zendy; Grosse Katrin | Zendy

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Defect Structure in Te‐doped GaAs Single Crystals after Plastic Deformation (II). Dislocation Slip and Cell Formation

Author(s) -

Paufler Peter,

Wagner Gerald,

Grosse Katrin

Publication year - 1993

Publication title -

crystal research and technology

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.377

H-Index - 64

eISSN - 1521-4079

pISSN - 0232-1300

DOI - 10.1002/crat.2170280213

Subject(s) - materials science , slip (aerodynamics) , dislocation , crystallography , doping , condensed matter physics , stacking , cell structure , partial dislocations , brittleness , deformation (meteorology) , composite material , chemistry , optoelectronics , thermodynamics , physics , organic chemistry , biology , biological system

At temperatures above the brittle‐to‐ductile transition (490 °C) in Te‐doped GaAs three types of predominant defect configurations have been observed after uniaxial compression along a [001] direction: (i) twins and stacking faults (500 … 520 °C), (ii) slip zones of dislocations (≈550 °C) and (iii) dislocation cells (580 … 590 °C). In Part II quantitative details of the appearance of slip and cell formation are given. Leading segments of gliding half loops are mainly of 60° type. Cell walls were formed by multiple slip of perfect dislocations.

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