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On Measuring Impurity Absorption Spectra of Semiconductors by Photoacoustic Spectroscopy
Author(s) -
Neumann H.
Publication year - 1993
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170280112
Subject(s) - impurity , semiconductor , photoacoustic spectroscopy , absorption (acoustics) , spectral line , absorption spectroscopy , amplitude , materials science , spectroscopy , photoacoustic effect , photoacoustic imaging in biomedicine , signal (programming language) , range (aeronautics) , analytical chemistry (journal) , chemistry , optics , optoelectronics , physics , organic chemistry , chromatography , quantum mechanics , astronomy , computer science , composite material , programming language
Theoretical relations are derived for the amplitude of the photoacoustic signal of a gas‐coupled cell for thick semiconductor samples including the influence of multiple reflections of light within the sample. It is shown that in the range of low absorption coefficients characteristic of impurity absorption spectra the sensitivity of the cell can be enhanced by using a highly reflecting metal as backing material. Numerical estimates for CuInSe 2 are given to illustrate this effect.