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Preparation of High‐quality InGaAsP/InP Heterostructures for Edge‐emitting 1.3 μm LED's
Author(s) -
Novotný J.,
Vyhnalík L.,
Zelinka J.
Publication year - 1993
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170280105
Subject(s) - heterojunction , optoelectronics , context (archaeology) , materials science , facet (psychology) , diode , light emitting diode , optical power , enhanced data rates for gsm evolution , quantum efficiency , reproducibility , optics , laser , chemistry , telecommunications , physics , engineering , paleontology , biology , psychology , social psychology , personality , chromatography , big five personality traits
Effects of varying the composite heterostructure geometry have been investigated in the context of InGaAsP/InP (λ λ= 1.3 μm) non‐coherent radiation sources. The study has been guided by a preliminary theoretical analysis and complemented by evaluation of the statistics in sample ensembles. Optimum construction diodes emit 600–700 μW/facet of optical power. The added quaternary layer of intermediate bandgap (Λ g λ= 1.1 μm) has been found to have benefical effect on the quantum efficiency and reproducibility of the manufacturing process.