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Defect Structure in Te‐doped GaAs single Crystals after Plastic Deformation (I). Twins and Stacking Faults
Author(s) -
Paufler Peter,
Wagner Gerald,
Grosse Katrin
Publication year - 1993
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170280102
Subject(s) - stacking , materials science , doping , crystallography , condensed matter physics , dislocation , slip (aerodynamics) , deformation (meteorology) , brittleness , macle , crystal twinning , composite material , chemistry , optoelectronics , microstructure , physics , nuclear magnetic resonance , thermodynamics
At temperatures above the brittle‐to‐ductile transition (490 °C) in Te‐doped GaAs three types of predominant defect configurations have been observed after uniaxial compression along a [001] direction: (i) twins and stacking faults (500 … 520 °C), (ii) slip zones of dislocations (≈ 550 °C) and (iii) dislocation cells (580 … 590 °C). In Part I quantitative details of the appearance of twins and stacking faults are given. Most frequently found were 30° partials in twins and stacking faults.