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Dependence of Energy Band Gap and Lattice Constant of III‐V Semiconductors on Electronegativity Difference of the Constituent Elements
Author(s) -
Xiuying Gong,
Fengsheng Gao,
Yamaguchi Tomuo,
Kan Hirofumi,
Kumagawa Masashi
Publication year - 1992
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170270817
Subject(s) - electronegativity , band gap , lattice constant , semiconductor , lattice (music) , condensed matter physics , chemistry , electronic band structure , thermodynamics , materials science , quantum mechanics , physics , optoelectronics , organic chemistry , diffraction , acoustics
The dependence of the energy bandgap and lattice constant of III‐V semiconductors on the electronegativity difference of the constituent elements were investigated. Some empirical expressions for estimating the energy bandgap and lattice constant with respect to solid compositions for mixed crystals were obtained. The results for some material systems predicted by electronegativity difference approach (ENDA) are compared with those obtained experimentally and those calculated by classical interpolation techniques (IT). The agreement between them is quite good, and it is demonstrated that ENDA is a simple and useful method for designing III‐V mixed crystals.