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Thermoelectric Phenomena in Gallium Monosulphide Single Crystals
Author(s) -
Gamal G. A.,
Nassary M. M.,
Hussein S. A.
Publication year - 1992
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170270722
Subject(s) - seebeck coefficient , thermoelectric effect , gallium , charge carrier , diffusion , relaxation (psychology) , analytical chemistry (journal) , chemistry , electrical resistivity and conductivity , range (aeronautics) , materials science , condensed matter physics , thermodynamics , optoelectronics , metallurgy , physics , chromatography , psychology , social psychology , quantum mechanics , composite material
Measurements of thermoelectric power of GaS single crystals grown by melt growth technique, were performed in the range of 150 K to 500 K. Investigations of GaS compound have revealed that it has interesting properties. Many physical parameters were determined such as carriers mobilities, effective masses of free charge carriers, diffusion coefficient and diffusion length as well as the relaxation time. Also the thermoelectric power behaviour showed the p‐type nature of GaS crystals.