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X‐ray and RHEED Characterization of Ge Ions‐Implanted Si Crystals Subjected to Pulsed‐Laser Annealing
Author(s) -
Auleytner J.,
Fiedorowicz H.,
Furmanik Z.,
Patron Z.,
Regiński K.
Publication year - 1992
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170270715
Subject(s) - annealing (glass) , materials science , laser , ion , silicon , reflection high energy electron diffraction , irradiation , diffraction , ion implantation , transmission electron microscopy , analytical chemistry (journal) , electron diffraction , optics , optoelectronics , chemistry , nanotechnology , metallurgy , physics , organic chemistry , chromatography , nuclear physics
In the experiment a (111) oriented silicon plate was subjected to implantation by 80 keV Ge ions. Then the pulsed‐laser annealing of this sample was carried out by using neodymium laser to form several areas irradiated with different light power. The effectiveness of the annealing has been analyzed by means of transmission X‐ray topography, double crystal X‐ray spectrometry, and reflection high energy electron diffraction. These three methods have appeared to be complementary and very effective in studying the spatial homogeneity of annealed areas, their state of annealing, and the damage in the surface layers.