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X‐ray Characterization of Defect Structure in LEC Annealed GaAs Crystals
Author(s) -
Czekalski T.,
ZielińskaRohozińska E.
Publication year - 1992
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170270712
Subject(s) - wafer , nucleation , materials science , crystallography , annealing (glass) , diffraction , x ray , crystallographic defect , characterization (materials science) , transmission electron microscopy , melting point , x ray crystallography , chemistry , optics , optoelectronics , composite material , nanotechnology , physics , organic chemistry
Wafers of commercially available semi‐insulating (SI) Czochralski‐grown GaAs crystals have been annealed at temperatures near the melting point (> 1100 °C) both for relatively short and long time and then rapidly quenched into cold water. Heat‐treated crystals have been investigated by X‐ray transmission diffraction topography. Cellular structure pattern of the as‐grown sample is replaced by images of precipitates spread out over whole sample. This suggests that the excess arsenic condenses as As precipitates with nucleation sites not correlated with cell walls.