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A Thorough Reconsideration of in‐situ Doping Theory of Epitaxial Silicon Layers
Author(s) -
Kühne H.
Publication year - 1992
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170270705
Subject(s) - epitaxy , doping , silicon , in situ , layer (electronics) , materials science , desorption , mechanism (biology) , composite number , nanotechnology , adsorption , chemical physics , chemical engineering , chemistry , optoelectronics , composite material , physics , organic chemistry , engineering , quantum mechanics
The adsorption‐desorption limited doping mechanism as suggested by R EIF and D UTTON to explain in‐situ doping of epitaxial CVD silicon layer will thoroughly be discussed in comparison to the more general transport‐reaction limited mechanism as originally suggested by S HEPERD , Distinctive and common features will be highilighted and discussed with respect to composite layer growth.