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Investigation of Residual Oxide Layers on GaAs Surfaces
Author(s) -
Marinova Ts.,
Krastev V.,
Yakimova R.
Publication year - 1992
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170270612
Subject(s) - x ray photoelectron spectroscopy , oxide , materials science , substrate (aquarium) , epitaxy , chemical composition , analytical chemistry (journal) , chemical engineering , chemistry , layer (electronics) , nanotechnology , metallurgy , chromatography , oceanography , organic chemistry , engineering , geology
GaAs(100) and (111) oriented samples, treated by means of different chemical procedures, are studied by X‐ray photoelectron spectroscopy (XPS). The thickness and composition of the residual oxide layers are estimated using the intensity ration of Ga 3d and As 3d core levels from the substrate and the oxide overlayers, respectively. Residual oxides containing As 2 O 3 and Ga 2 O 3 on GaAs surface are observed. The thickness of the oxide layers is found to range from 3Å to 15 Å. Optimal conditions for pre‐epitaxial surface preparation of GaAs substrates are suggested.