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A Gamma‐ray Diffraction Study of MBE‐Grown CaF 2 /Si(111) Heterostructures
Author(s) -
Kurbakov A. I.,
Rubinova E. E.,
Sokolov A. E.,
Mäder M.,
Tempel A.,
Tobisch J.
Publication year - 1992
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170270609
Subject(s) - wafer , materials science , annealing (glass) , diffraction , epitaxy , heterojunction , molecular beam epitaxy , substrate (aquarium) , crystallography , dislocation , x ray crystallography , reflection (computer programming) , optics , optoelectronics , composite material , chemistry , oceanography , physics , layer (electronics) , geology , computer science , programming language
MBE grown epitaxial films of CaF 2 onto Si(111) substrates were investigated by gamma ray diffraction to obtain assertions about the real structure and the strain situation in the epitaxial systems. It were measured the integral reflection coefficient R i and the angle distribution of the reflected intensity of both (111) and (333) reflections. It was found that (i) a high temperature annealing step during the wafer preparation (1200 °C) causes a drastical increase of real structure defects in the substrate material, (ii) expitaxial layers of 18 nm thickness are grown pseudomorphically, layers having a thickness of 30 nm are relaxed, (iii) the misfit dislocation network formed during the relaxation process is localized not in the deposit but in the substrate material.