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Formation Volume of Schottky Defects (Vacancies) in Inorganic and Organic Compounds and the Defect Formation Mechanism of Melting
Author(s) -
Bollmann W.
Publication year - 1992
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170270518
Subject(s) - schottky diode , melting point , enthalpy , vacancy defect , crystallographic defect , schottky defect , fusion , enthalpy of fusion , chemistry , thermodynamics , volume (thermodynamics) , schottky barrier , crystallography , materials science , physics , organic chemistry , linguistics , philosophy , optoelectronics , diode
Abstract The formation volume V s of Schottky defects is given by V s = ( h s / L ) Δ V f with h s = 8 L (formation enthalpy h s of Schottky defects and heat L of fusion given in same units; Δ V f = change of volume due to melting). If there are phase transitions within the solid, L and Δ V f must be replaced by ( L + Δ H t ) and by (Δ V f + Δ V t ), respectively (Dr. H t and Δ V t refer to the heat(s) of transition(s) and to the volume change(s) due to transition(s), resp.). The pressure dependence of the melting point is dT m / dp = ( T m V s )/ h s . Independent on the sign of V s any increase of the Schottky defect (vacancy) concentration above the maximum concentration possible within the solid decreases the melting point thus resulting in the observed surface melting. The melting point is fixed by the characteristics of Schottky defect formation ( h s , s s , V s ) and by the bulk modulus of the solid ( s s = formation entropy of Schottky defects).