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Gettering Properties of Praseodymium in InGaP LPE Growth
Author(s) -
Lai M. Z.,
Chang L. B.
Publication year - 1992
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170270509
Subject(s) - praseodymium , epitaxy , materials science , full width at half maximum , photoluminescence , analytical chemistry (journal) , atmospheric temperature range , doping , optoelectronics , chemistry , nanotechnology , metallurgy , physics , layer (electronics) , chromatography , meteorology
Praseodymium (Pr) is added to the InGaP growth melt during Liquid Phase Epitaxy (LEP) for the first time. The epilayers are grown by using a supercoling method, on (100) Cr‐doped Semi‐Insulating (SI) GaAs substrates at a growth temperature of 790°C. An examination of the electrical properties reveals that, depending on the amount of Pr in the growth melt, n‐tpye InGaP epilayers with room temperature electron concentrations in the range of 3.4 × 10 16 cm −3 to 5.3 × 10 15 cm −3 and electron mobilities from 730 to 1310 cm 2 /Vs can be prepared. The photoluminescence spectral results show that by increasing the amount of Pr in the growth melt, smaller Full Width at Half Maximum (FWHM) values and better band edge (BE) recombination intensities result.